BSS83P.pdf

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Preliminary data
BSS 83 P
SIPMOS Ò
Small-Signal-Transistor
Features
Product Summary
Drain source voltage
·
P-Channel
· Enhancement mode
·
V DS
-60
V
Drain-Source on-state resistance
R DS(on)
2
W
Avalanche rated
·
Continuous drain current
I D
-0.33
A
Logic Level
·
3
dv/dt rated
2
1
VPS05161
Type
Package
Ordering Code
Marking
YAs
Pin 1
PIN 2
PIN 3
BSS 83 P
SOT-23
Q67041-S1416
G
S
D
Maximum Ratings ,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
-0.33
-0.27
Unit
Continuous drain current
T A = 25 °C
T A = 70 °C
I D
A
Pulsed drain current
T A = 25 °C
I D puls
-1.32
Avalanche energy, single pulse
I D = -0.33 A , V DD = -25 V, R GS = 25
E AS
9.5
mJ
W
Avalanche energy, periodic limited by T jmax
E AR
0.036
Reverse diode dv/dt
I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs,
T jmax = 150 °C
dv/dt
6
kV/µs
Gate source voltage
V GS
V
±
20
Power dissipation
T A = 25 °C
P tot
0.36
W
Operating and storage temperature
T j , T stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
1999-09-16
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Preliminary data
BSS 83 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
R thJS
-
-
150
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm 2 cooling area 1)
R thJA
350
300
K/W
-
-
-
-
Electrical Characteristics , at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, I D = -250 µA
V (BR)DSS
-60
-
-
V
Gate threshold voltage, V GS = V DS
I D = -80 µA
V GS(th)
-1
-1.5
-2
Zero gate voltage drain current
V DS = -60 V, V GS = 0 V, T j = 25 °C
V DS = -60 V, V GS = 0 V, T j = 125 °C
I DSS
-0.1
-10
-1
-100
µA
-
-
Gate-source leakage current
V GS = -20 V, V DS = 0 V
I GSS
-
-10
-100
nA
Drain-Source on-state resistance
V GS = -4.5 V, I D = -0.27 A
R DS(on)
-
2
3
W
Drain-Source on-state resistance
V GS = -10 V, I D = -0.33 A
R DS(on)
-
1.4
2
W
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
1999-09-16
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Preliminary data
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V DS ³
g fs
0.24
0.47
-
S
2*I D *R DS(on)max , I D = -0.27 A
Input capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
C iss
-
62
78
pF
Output capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
C oss
-
19
24
C rss
-
7
9
Turn-on delay time
V DD = -30 V, V GS = -4.5 V, I D = -0.27 A,
R G = 43
t d(on)
-
23
35
ns
W
Rise time
V DD = -30 V, V GS = -4.5 V, I D = -0.27 A,
R G = 43
t r
-
71
106
W
Turn-off delay time
V DD = -30 V, V GS = -4.5 V, I D = -0.27 A,
R G = 43
t d(off)
-
56
70
W
Fall time
V DD = -30 V, V GS = -4.5 V, I D = -0.27 A,
R G = 43
t f
-
61
76
W
Page 3
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Preliminary data
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V DD = -48 V, I D = -0.33 A
Q gs
-
0.12
0.18
nC
Gate to drain charge
V DD = -48 , I D = -0.33 A
Q gd
-
1.1
1.65
Gate charge total
V DD = -48 V, I D = -0.33 A, V GS = 0 to -10 V
Q g
-
2.38
3.57
Gate plateau voltage
V DD = -48 V , I D = -0.33 A
V (plateau)
-
-2.94
-
V
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T A = 25 °C
I S
-
-
-0.33
A
Inverse diode direct current,pulsed
T A = 25 °C
I SM
-
-
-1.32
Inverse diode forward voltage
V GS = 0 V, I F = -0.33
V SD
-
-0.84
-1.1
V
Reverse recovery time
V R = -30 V, I F =I S , di F /dt = 80 A/µs
t rr
-
59.4
89
ns
Reverse recovery charge
V R = -30 V, I F = l S , di F /dt = 80 A/µs
Q rr
-
37.5
56
µC
Page 4
1999-09-16
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Preliminary data
BSS 83 P
Power Dissipation
P tot = f (T A )
Drain current
I D = f (T A )
parameter: V GS ³
10 V
BSS 83 P
BSS 83 P
0.38
-0.36
W
A
0.32
-0.28
0.28
-0.24
0.24
-0.20
0.20
-0.16
0.16
-0.12
0.12
-0.08
0.08
-0.04
0.04
0.00
0.00
°C
°C
0
20
40
60
80
100
120
160
0
20
40
60
80
100
120
160
T A
T A
Safe operating area
I D = f ( V DS )
parameter : D = 0 , T A = 25 °C
Transient thermal impedance
Z thJC = f (t p )
parameter : D = t p /T
BSS 83 P
BSS 83 P
1
3
-10
10
A
K/W
t p = 88.0µs
100 µs
0
2
-10
10
1 ms
-1
1
-10
10
D = 0.50
10 ms
0.20
0.10
0.05
-2
0
-10
10
single pulse
0.02
DC
0.01
-3
-1
-10
10
-10 -1
-10 0
-10 1
-10 2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 1
10 2
10 4
V
V DS
s
t p
Page 5
1999-09-16
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