BD707-709_BD711-712.pdf

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BD707/709/711
BD708/712
[
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMENTARY PNP - NPN DEVICES
n
APPLICATION
n
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD707, BD709 and BD711 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package. They are intented for
use in power linear and switching applications.
The BD707 and BD711 complementary PNP
types are BD708 and BD712 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD707
BD709
BD711
PNP
BD708
BD712
V CBO
Collector-Base Voltage (I E =0)
60
80
100
V
V CER
Collector-Emitter Voltage (V BE =0)
60
80
100
V
V CEO
Collector-Emitter Voltage (I B =0)
60
80
100
V
V EBO
Emitter-Base Voltage (I C =0)
5
V
I C
Collector Current
12
A
I CM
Collector Peak Current
18
A
I B
Base Current
5
A
o C
P tot
Total Dissipation at T c
25
75
W
3
o C
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
For PNP types voltage and current values are negative
September 1999
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BD707/708/709/711/712
THERMAL DATA
o C/W
o C/W
R thj-case
R thj-case
Thermal
Resistance
Junction-case
Max
1.67
70
Thermal
Resistance
Junction-ambient
Max
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E =0)
for BD707/708
V CB =60V
100
100
100
A
m
for BD709
V CB =80V
m
A
for BD711/712
V CB = 100 V
m
A
T case =150 o C
for BD707/708
V CB =60V
1
1
1
mA
mA
mA
for BD709
V CB =80V
for BD711/712
V CB = 100 V
I CEO
Collector Cut-off
Current (I B =0)
for BD707/708
V CE =30V
100
100
100
mA
mA
mA
for BD709
V CE =40V
for BD711/712
V CE =50V
I EBO
Emitter Cut-off Current
(I C =0)
V EB =5V
1
mA
V CEO(s us)
*
Collector-Emitter
Sustaining Voltage
(I B =0)
I C =100mA
for BD707/708
for BD709
for BD711/712
60
80
100
V
V
V
V CE(sat) *
Collector-Emitter
Saturation Voltage
I C =4A
I B =0.4A
1
V
V CEK
*
Knee Voltage
I C =3A
I B =**
0.4
V
V BE *
Base-Emitter Voltage
I C =4A
V CE =4V
1.5
V
h FE *
DC Current Gain
I C =0.5A
V CE =2V
40
120
400
I C =2A
V CE =2V
for BD707/708
for BD709
30
30
15
I C =4A
V CE =4V
150
I C =10A
V CE =4V
for BD707/708
for BD709
for BD711/712
5
10
8
8
f T
Transition frequency
I C =300mA
V CE =3V
3
MHz
*
s, duty cycle 1.5 %
** Value for which I C = 3.3 A at V CE = 2V.
For PNP types voltage and current values are negative.
Pulsed: Pulse duration = 300
m
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BD707/708/709/711/712
Safe Operating Areas
Derating Curve
DC Current Gain(NPN type)
DC Current Gain(PNP type)
DC Transconductance(NPNtype)
DC Transconductance(PNPtype)
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BD707/708/709/711/712
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
Transition Frequency (PNP type)
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BD707/708/709/711/712
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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